Low-Temperature and Ammonia-Free Epitaxy of the GaN/AlGaN/GaN Heterostructure

Wide band-gap semiconductors are very attractive because of their broad applications as electronics and optoelectronics materials, GaN-based materials being by far the most promising. For production such nitride-based optical power devices, metal–organic chemical vapor deposition (MOCVD) is routinely used. However, this has disadvantages, large consumption ammonia gas need for a high growth temperature. To go beyond limit, in study we successfully developed remote plasma MOCVD (RP-MOCVD) approach epitaxial high-quality GaN/AlGaN heterostructures on 4H-SiC substrates. Our RP-MOCVD advantages lower temperature (750 °C) compared to conventional route use N2/H2 instead nitrides growth, generating situ NHx (x = 0–3) species needed growth. As assessed structural, morphological, optical, electrical characterization, proposed strategy provides an overall cost-effective green heteroepitaxy, suitable electron mobility transistors (HEMT) technology.